1 2 mbi1200u4g-170 igbt modules igbt module ( u series) 1700v / 1200a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive ampli?er uninterruptible power suppl y industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25 c unless otherwise speci?ed) items symbols conditions maximum ratings units collector-emitter voltage v ces 1700 v gate-emitter voltage v ges 20 v collector current i c continuous tc= 25 c 1 6 00 a tc=80 c 12 00 i c p 1ms tc= 25 c 32 00 tc=80 c 24 00 -i c 12 00 -i c pulse 1ms 24 00 collector power dissipation p c 1 device 6250 w junction temperature tj 150 c storage temperature tstg -40 to +125 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 3400 vac screw torque (*2) mounting 5.75 n m main terminals 10 sense terminals 2.5 note *1: all terminals should be connected together when isolation test will be done. note *2: recommendable value : mounting : 4.25-5.75 nm (m6), main terminals : 8-10 nm (m8) , sense terminals : 1.7-2.5 nm (m4) electrical characteristics (at tj= 25c unless otherwise speci?ed) items symbols conditions characteristics units min. typ. max. zero gate voltage collector current i ces v ge = 0v , v ce = 170 0v - - 1.0 ma gate-emitter leakage current i ges v c e = 0v , v ge = 20v - - 1600 n a gate-emitter threshold voltage v ge (th) v ce = 20v , i c = 12 00 ma 5.5 6.5 7.5 v collector-emitter saturation voltage v ce (sat) (main t erminal) v ge = 15v i c = 12 00 a tj=25c - 2 .57 2.76 v tj= 125c - 2.97 - v ce (sat) ( ch ip ) tj=25c - 2.25 2.40 tj= 125c - 2.65 - input capacitance cies v c e = 10v, v g e = 0v, f = 1mhz - 112 - n f turn-on time ton v cc = 9 00v , i c = 12 00 a, v ge = 15v, t j = 125c , r gon = 4.7 ?, r goff = 1.2 ? - 3.10 - s tr - 1.25 - turn-off time toff - 1.45 - tf - 0.25 - forward on voltage v f (main t erminal) v ge = 0 v i f = 12 00 a tj= 25c - 2 .12 2.51 v tj= 125c - 2.32 - v f ( ch ip ) tj= 25c - 1.80 2.15 tj= 125c - 2.00 - reverse recovery time trr i f = 12 00 a - 0.45 - s lead resistance, terminal-chip (*3) r lead - 0.27 - m? note *3: biggest internal terminal resistance among arm. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) igbt - - 0.020 c/w fwd - - 0.033 contact thermal resistance (1device) rth(c-f) with thermal compound (*4) - 0.006 - note *4: this is the value w hich is de?ned mounting on the additional cooling ?n with thermal compound.
2 2 mbi1200u4g-170 2 igbt modules characteristics (representative) dynamic gate charge (typ.) capacitance vs. collector-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) tj=25c, chip tj=125c, chip tj=25c, chip collector-emitter voltage vs. gate-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) vge=0v, f=1mhz, tj=25c tj=25c 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 2 4 0 0 2 8 0 0 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 2 4 0 0 2 8 0 0 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 2 4 6 8 1 0 5 1 0 1 5 2 0 2 5 collector-emitter voltage : vce [v] gate-emitter voltage : vge [v] ic=2400a ic=1200a ic=600a 1 1 0 1 0 0 1 0 0 0 0 1 0 2 0 3 0 capacitance : cies, coes, cres [nf] collector-emitter voltage : vce[v] cies coes cres 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 5 0 0 0 gate charge : qg [nc] 0 5 1 0 1 5 2 0 2 5 vge vce collector-emitter voltage : vce [v] gate-emitter voltage : vge [v] collector-emitter voltage vs. gate-emitter voltage (typ.) vge=+15v, chip 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 2 4 0 0 2 8 0 0 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 collector current : ic [a] collector-emitter voltage : vce [v] tj=125c tj=25c
3 3 igbt modules 2 mbi1200u4g-170 reverse bias safe operating area (max.) vcc=900v, vge=15v, rgon=4.7, rgoff=1.2, tj=125c switching loss vs. collector current (typ.) switching loss vs. gate resistance (typ.) vcc=900v, ic=1200a, vge=15v, tj=125c vge=15v, tj=125c/chip switching time vs. gate resistance (typ.) vcc=900v, ic=1200a, vge=15v, tj=125c vcc=900v, vge=15v, rgon=4.7, rgoff=1.2, tj=125c switching time vs. collector current (typ.) 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 switching time : ton, tr, toff, tf [us] collector current : ic [a] ton toff tr tf 0 . 0 1 . 0 2 . 0 3 . 0 4 . 0 5 . 0 6 . 0 0 2 4 6 8 1 0 1 2 1 4 switching time : ton, tr, toff, tf [us] gate resistance : rg [] t r t f t o f f t o n 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 switching loss : eon, eoff, err [mj/pulse] collector current : ic [a], forward current : if [a] eon eoff err 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 0 2 4 6 8 1 0 1 2 1 4 switching loss : eon, eoff, err [mj/pulse] gate resistance : rg [] e o f f e r r e o n 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 2 4 0 0 2 8 0 0 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 collector current : ic [a] collector-emitter voltage : vce [v]
4 2 mbi1200u4g-170 4 igbt modules forward current vs. forward on voltage (typ.) chip reverse recovery characteristics (typ.) vcc=900v, vge=15v, rgon=4.7, tj=125c transient thermal resistance (max.) 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 2 4 0 0 2 8 0 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 forward current : if [a] forward on voltage : vf [v] t j = 2 5 c t j = 1 2 5 c 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 0 4 0 0 8 0 0 1 2 0 0 1 6 0 0 2 0 0 0 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 reverse recovery time : trr [us] reverse recovery current : irr [a] forward current : if [a] t r r i r r 0 . 0 0 0 1 0 . 0 0 1 0 0 . 0 1 0 0 0 . 1 0 0 0 0 . 0 0 1 0 . 0 1 0 0 . 1 0 0 1 . 0 0 0 thermal resistanse : rth (j-c) [c/w] pulse width : pw [sec] f w d i g b t
5 5 igbt modules 2 mbi1200u4g-170 equivalent circuit schematic outline drawings, mm main emitter main collector main collector main emitter sense emitter e1 c1 c2 e2 e1 gate g1 sense collector sense collector gate sense emitter c1 c2 g2 e2
6 2 mbi1200u4g-170 igbt modules warning 1. this catalog contains the product speci?cations, characteristics, data, materials, and structures as of october 2008. the contents are subject to change without notice for speci?cation changes or other reasons. when using a product listed in this catalog, be sure to obtain the latest speci?cations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric device technology co., ltd. is (or shall be deemed) granted. fuji electric device technology co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric device technology co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, ?re, or other problem if any of the products become faulty. it is recommended to make your design fail-safe, ?ame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric device technology co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traf?c-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2008 by fuji electric device technology co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric device technology co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric device technology co., ltd. or its sales agents before using the product. neither fuji electric device technology co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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